Operating Temperature -55°C~175°C TJ
Series CoolSiC?
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Technology SiCFET (Silicon Carbide)
Power Dissipation-Max 150W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 78m Ω @ 13A, 18V
Vgs(th) (Max) @ Id 5.7V @ 5.6mA
Input Capacitance (Ciss) (Max) @ Vds 1.06nF @ 800V
Current - Continuous Drain (Id) @ 25°C 36A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 18V
Drain to Source Voltage (Vdss) 1.2kV
Drive Voltage (Max Rds On,Min Rds On) 15V 18V
Vgs (Max) +23V, -7V