Operating Temperature 150°C TJ
Packaging Bulk
Published 2011
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 50W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Turn On Delay Time 35 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 325m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 16A Ta
Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
Rise Time 60ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) 16A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 64A
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 17.1 mJ