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APT11N80BC3G

Microsemi Corporation
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 800V 11A TO-247
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Inventory: 223
Minimum: 1
Total Price: USD $2.41
Unit Price: USD $2.410952
≥1 USD $2.410952
≥10 USD $2.340042
≥100 USD $2.269131
≥500 USD $2.180493

Technical Details

Supply Chain

Factory Lead Time 24 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 38.000013g
Transistor Element Material SILICON

Dimensions

Height 5.31mm
Length 21.46mm
Width 16.26mm

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Voltage - Rated DC 800V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 11A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 156W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 156W
Case Connection DRAIN
Turn On Delay Time 25 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 450m Ω @ 7.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 680μA
Input Capacitance (Ciss) (Max) @ Vds 1585pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Rise Time 15 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 11A
JEDEC-95 Code TO-247AD
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.45Ohm
Pulsed Drain Current-Max (IDM) 33A
Avalanche Energy Rating (Eas) 470 mJ

Alternative Model

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