IPB023N04NGATMA1

Infineon Technologies

RoHS

Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Description Trans MOSFET N-CH 40V 90A 3-Pin(2+Tab) TO-263

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Technical Details

Physical

Mount Surface Mount

Mounting Type Surface Mount

Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins 3

Transistor Element Material SILICON

Compliance

RoHS Status RoHS Compliant

Technical

Operating Temperature -55°C~175°C TJ

Packaging Tape & Reel (TR)

Published 2011

Series OptiMOS?

JESD-609 Code e3

Pbfree Code yes

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 2

ECCN Code EAR99

Terminal Finish MATTE TIN

Technology MOSFET (Metal Oxide)

Terminal Position SINGLE

Terminal Form GULL WING

Peak Reflow Temperature (Cel) 260

Reach Compliance Code unknown

Time@Peak Reflow Temperature-Max (s) 40

Pin Count 4

JESD-30 Code R-PSSO-G2

Qualification Status Not Qualified

Number of Elements 1

Configuration SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max 167W Tc

Operating Mode ENHANCEMENT MODE

Case Connection DRAIN

FET Type N-Channel

Transistor Application SWITCHING

Rds On (Max) @ Id, Vgs 2.3m Ω @ 90A, 10V

Vgs(th) (Max) @ Id 4V @ 95μA

Input Capacitance (Ciss) (Max) @ Vds 10000pF @ 20V

Current - Continuous Drain (Id) @ 25°C 90A Tc

Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V

Drain to Source Voltage (Vdss) 40V

Drive Voltage (Max Rds On,Min Rds On) 10V

Vgs (Max) ±20V

Continuous Drain Current (ID) 90A

Pulsed Drain Current-Max (IDM) 400A

DS Breakdown Voltage-Min 40V

Avalanche Energy Rating (Eas) 150 mJ

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