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FQA62N25C

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 250V N-Channel Adv Q-FET C-Series
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Inventory: 85
Minimum: 1
Total Price: USD $9.87
Unit Price: USD $9.86727
≥1 USD $9.86727
≥10 USD $8.09571
≥100 USD $7.843343
≥500 USD $7.589978
≥1000 USD $7.33761

Technical Details

Supply Chain

Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series QFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 35MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 250V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 62A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 298W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 298W
Turn On Delay Time 75 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 35m Ω @ 31A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6280pF @ 25V
Current - Continuous Drain (Id) @ 25°C 62A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Rise Time 395 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 335 ns
Turn-Off Delay Time 245 ns
Continuous Drain Current (ID) 62A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 250V
Pulsed Drain Current-Max (IDM) 248A

Dimensions

Height 18.9mm
Length 15.8mm
Width 5mm

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.401g
Transistor Element Material SILICON

Alternative Model

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