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IPN70R1K4P7SATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-261-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CHANNEL 700V 4A SOT223
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Inventory: 13910
Minimum: 1
Total Price: USD $0.17
Unit Price: USD $0.168399
≥1 USD $0.168399
≥10 USD $0.163446
≥100 USD $0.158493
≥500 USD $0.152302

Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Physical

Mounting Type Surface Mount
Package / Case TO-261-3
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series CoolMOS? P7
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 6.2W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.4 Ω @ 700mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 40μA
Input Capacitance (Ciss) (Max) @ Vds 158pF @ 400V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Gate Charge (Qg) (Max) @ Vgs 4.7nC @ 10V
Drain to Source Voltage (Vdss) 700V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±16V
DS Breakdown Voltage-Min 700V

Compliance

RoHS Status ROHS3 Compliant
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