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IRFH5015TRPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 150V 10A 8VQFN
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Inventory: 1616
Minimum: 1
Total Price: USD $0.33
Unit Price: USD $0.330492
≥1 USD $0.330492
≥10 USD $0.320772
≥100 USD $0.311051
≥500 USD $0.298901

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-N5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 3.6W Ta 156W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.6W
Case Connection DRAIN
Turn On Delay Time 9.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 31m Ω @ 34A, 10V
Vgs(th) (Max) @ Id 5V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 2300pF @ 50V
Current - Continuous Drain (Id) @ 25°C 10A Ta 56A Tc
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Rise Time 9.7 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.4 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 56A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 150V
Pulsed Drain Current-Max (IDM) 220A
Avalanche Energy Rating (Eas) 230 mJ
Max Junction Temperature (Tj) 150°C

Dimensions

Height 900μm
Length 6.1468mm
Width 5.15mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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