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IPP034N03LGHKSA1

Infineon Technologies
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 80A TO-220-3
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Inventory: 12119
Minimum: 1
Total Price: USD $12.21
Unit Price: USD $12.211395
≥1 USD $12.211395
≥10 USD $10.019888
≥100 USD $9.706673
≥500 USD $9.393458
≥1000 USD $9.080243

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package PG-TO220-3-1

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2007
Series OptiMOS?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 94W Tc
Power Dissipation 94W
Turn On Delay Time 9.2 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5300pF @ 15V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 25nC @ 4.5V
Rise Time 6.4ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.4 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 5.3nF
Drain to Source Resistance 3.4mOhm
Rds On Max 3.4 mΩ

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