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IPS70R600CEAKMA2

Infineon Technologies
RoHS
/
Package /
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description CONSUMER
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Technical Details

Physical

Surface Mount NO
Transistor Element Material SILICON

Technical

Published 2013
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 3
ECCN Code EAR99
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSIP-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-251
Drain-source On Resistance-Max 0.6Ohm
Pulsed Drain Current-Max (IDM) 18A
DS Breakdown Voltage-Min 700V
Avalanche Energy Rating (Eas) 55 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR

Compliance

RoHS Status Non-RoHS Compliant

Alternative Model

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