Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Additional Feature UL RECOGNIZED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 4
JESD-30 Code R-PUFM-X4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 450W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 800m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id 4V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 7800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 15A Tc
Gate Charge (Qg) (Max) @ Vgs 485nC @ 10V
Rise Time 12ns
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 59 ns
Continuous Drain Current (ID) 15A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.8Ohm
Pulsed Drain Current-Max (IDM) 60A
DS Breakdown Voltage-Min 1200V
Avalanche Energy Rating (Eas) 2500 mJ
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Series POWER MOS V?
Pbfree Code yes