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Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 700V TO247
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-247-3

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology SiCFET (Silicon Carbide)
Power Dissipation-Max 176W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 145m Ω @ 10A, 20V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1035pF @ 700V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Gate Charge (Qg) (Max) @ Vgs 67nC @ 20V
Drain to Source Voltage (Vdss) 700V
Drive Voltage (Max Rds On,Min Rds On) 20V
Vgs (Max) +25V, -10V
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