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IRFHM830DTR2PBF

Infineon Technologies
RoHS
/
Package 8-VQFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 20A PQFN
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-VQFN Exposed Pad
Number of Pins 8

Dimensions

Height 990.6μm
Length 3.2766mm
Width 3.3mm

Technical

Packaging Digi-Reel?
Published 2013
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 2.8W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation 37W
Turn On Delay Time 9.8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.3m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.35V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 1797pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Rise Time 20ns
Fall Time (Typ) 6.7 ns
Turn-Off Delay Time 9.1 ns
Continuous Drain Current (ID) 20A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Recovery Time 24 ns
Nominal Vgs 1.8 V

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant

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