Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series HEXFET?
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 15.5MOhm
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 40V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 9.4A
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 7.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15.5m Ω @ 9.4A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2460pF @ 20V
Current - Continuous Drain (Id) @ 25°C 9.4A Ta
Gate Charge (Qg) (Max) @ Vgs 34nC @ 4.5V
Rise Time 2.3 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±12V
Fall Time (Typ) 3.8 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 9.4A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 75A