FQPF19N20CYDTU

ON Semiconductor

RoHS

Package TO-220-3 Full Pack, Formed Leads

Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Description Trans MOSFET N-CH 200V 19A 3-Pin(3+Tab) TO-220F Rail

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Technical Details

Physical

Mount Through Hole

Mounting Type Through Hole

Package / Case TO-220-3 Full Pack, Formed Leads

Number of Pins 3

Weight 2.565g

Technical

Operating Temperature -55°C~150°C TJ

Packaging Tube

Series QFET?

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Technology MOSFET (Metal Oxide)

Number of Elements 1

Power Dissipation-Max 43W Tc

Element Configuration Single

Power Dissipation 43W

Turn On Delay Time 15 ns

FET Type N-Channel

Rds On (Max) @ Id, Vgs 170m Ω @ 9.5A, 10V

Vgs(th) (Max) @ Id 4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds 1080pF @ 25V

Current - Continuous Drain (Id) @ 25°C 19A Tc

Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V

Rise Time 150ns

Drain to Source Voltage (Vdss) 200V

Drive Voltage (Max Rds On,Min Rds On) 10V

Vgs (Max) ±30V

Fall Time (Typ) 115 ns

Turn-Off Delay Time 135 ns

Continuous Drain Current (ID) 19A

Gate to Source Voltage (Vgs) 30V

Compliance

Radiation Hardening No

RoHS Status RoHS Compliant

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