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IRFU3711PBF

Infineon Technologies
RoHS
/
Package TO-251-3 Short Leads, IPak, TO-251AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 20V 100A I-PAK
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Supplier Device Package IPAK (TO-251)

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Current Rating 110A
Power Dissipation-Max 2.5W Ta 120W Tc
Power Dissipation 120W
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2980pF @ 10V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 44nC @ 4.5V
Rise Time 220ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 20V
Input Capacitance 2.98nF
Drain to Source Resistance 8.5mOhm
Rds On Max 6.5 mΩ

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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