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PHB110NQ08T,118

Nexperia USA Inc.
RoHS
/
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 75V 75A D2PAK
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Inventory: 855
Minimum: 1
Total Price: USD $1.06
Unit Price: USD $1.0626
≥1 USD $1.0626

Technical Details

Physical

Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 1997
Series TrenchMOS?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
HTS Code 8541.29.00.75
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 230W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 230W
Case Connection DRAIN
Turn On Delay Time 35 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4860pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 113.1nC @ 10V
Rise Time 107 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 100 ns
Turn-Off Delay Time 183 ns
Continuous Drain Current (ID) 75A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 75V
Drain-source On Resistance-Max 0.009Ohm
Drain to Source Breakdown Voltage 75V
Pulsed Drain Current-Max (IDM) 440A
Avalanche Energy Rating (Eas) 560 mJ

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Alternative Model

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