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SI3441BDV-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package SOT-23-6 Thin, TSOT-23-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 20V 2.45A 6-TSOP
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish PURE MATTE TIN
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 6
Number of Elements 1
Power Dissipation-Max 860mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 860mW
Turn On Delay Time 15 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 90m Ω @ 3.3A, 4.5V
Vgs(th) (Max) @ Id 850mV @ 250μA
Current - Continuous Drain (Id) @ 25°C 2.45A Ta
Gate Charge (Qg) (Max) @ Vgs 8nC @ 4.5V
Rise Time 55ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) -2.45A
Threshold Voltage -850mV
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.09Ohm
Drain to Source Breakdown Voltage -20V
Nominal Vgs -850 mV

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant

Dimensions

Height 1mm
Length 3.05mm
Width 1.65mm

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