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SI3853DV-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package SOT-23-6 Thin, TSOT-23-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 20V 1.8A 1.15W 200mohm @ 4.5V
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series LITTLE FOOT?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish PURE MATTE TIN
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 6
JESD-30 Code R-PDSO-G6
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 830mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 830mW
FET Type P-Channel
Rds On (Max) @ Id, Vgs 200m Ω @ 1.8A, 4.5V
Vgs(th) (Max) @ Id 500mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C 1.6A Ta
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Continuous Drain Current (ID) 1.6A
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.2Ohm
Drain to Source Breakdown Voltage 20V
FET Feature Schottky Diode (Isolated)

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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