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SI4324DY-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 36A 8-SOIC
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Supplier Device Package 8-SO

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series TrenchFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3.5W Ta 7.8W Tc
Element Configuration Single
Turn On Delay Time 30 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3510pF @ 15V
Current - Continuous Drain (Id) @ 25°C 36A Tc
Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V
Rise Time 135ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 24A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 3.51nF
Drain to Source Resistance 3.2mOhm
Rds On Max 3.2 mΩ

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
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