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SI4412ADY-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 30V 8.0A 2.5W 24mohm @ 10V
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Inventory: 2058
Minimum: 1
Total Price: USD $0.58
Unit Price: USD $0.580545
≥1 USD $0.580545
≥10 USD $0.476805
≥100 USD $0.461843
≥500 USD $0.44688
≥1000 USD $0.431918

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish PURE MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Number of Elements 1
Power Dissipation-Max 1.3W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 15 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 24m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C 5.8A Ta
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 6ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 5.8A
JEDEC-95 Code MS-012AA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.024Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 30A

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

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