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IRFH5110TR2PBF

Infineon Technologies
RoHS
/
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 5X6 PQFN
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Inventory: 60048
Minimum: 1
Total Price: USD $1.55
Unit Price: USD $1.551113
≥1 USD $1.551113
≥10 USD $1.27281
≥100 USD $1.23291
≥500 USD $1.19301
≥1000 USD $1.15311

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Supplier Device Package 8-PQFN (5x6)

Technical

Packaging Cut Tape (CT)
Published 2010
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 3.6W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 114W
Turn On Delay Time 7.8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 12.4mOhm @ 37A, 10V
Vgs(th) (Max) @ Id 4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 3152pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11A Ta 63A Tc
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
Rise Time 9.6ns
Drain to Source Voltage (Vdss) 100V
Fall Time (Typ) 6.4 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 63A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Input Capacitance 3.152nF
Recovery Time 51 ns
Drain to Source Resistance 12.4mOhm
Rds On Max 12.4 mΩ
Nominal Vgs 4 V

Dimensions

Height 838.2μm
Length 5.9944mm
Width 5mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant

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