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IRLML6402GTRPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 20V 3.7A SOT-23-3
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Total Price: USD $0.02
Unit Price: USD $0.02207
≥1 USD $0.02207
≥10 USD $0.021421
≥100 USD $0.020772
≥500 USD $0.01996

Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Manufacturer Package Identifier IRLML6402GTRPBF

Technical

Operating Temperature -55┬?C~150┬?C TJ
Packaging Tape & Reel (TR)
Published 2009
Series HEXFET┬?
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 65MOhm
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.3W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3W
Turn On Delay Time 350 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 65m ╬? @ 3.7A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250╬╝A
Input Capacitance (Ciss) (Max) @ Vds 633pF @ 10V
Current - Continuous Drain (Id) @ 25┬?C 3.7A Ta
Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V
Rise Time 48 ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ┬?12V
Fall Time (Typ) 381 ns
Turn-Off Delay Time 588 ns
Continuous Drain Current (ID) -3.7A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 22A
Max Junction Temperature (Tj) 150┬?C

Dimensions

Height 1.12mm
Length 3.0226mm
Width 1.397mm

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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