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IRF6709S2TRPBF

Infineon Technologies
RoHS
/
Package DirectFET? Isometric S1
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 25V 12A DIRECTFET-S1
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Inventory: 1289
Minimum: 1
Total Price: USD $0.42
Unit Price: USD $0.42294
≥1 USD $0.42294
≥10 USD $0.34713
≥100 USD $0.336158
≥500 USD $0.326183
≥1000 USD $0.31521

Technical Details

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1.8W Ta 21W Tc
Power Dissipation 21W
Turn On Delay Time 8.4 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.8mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1010pF @ 13V
Current - Continuous Drain (Id) @ 25°C 12A Ta 39A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Rise Time 25ns
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9.5 ns
Turn-Off Delay Time 9.1 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 25V
Input Capacitance 1.01nF
Drain to Source Resistance 13.5mOhm
Rds On Max 3.8 mΩ

Dimensions

Height 558.8μm
Length 4.826mm
Width 3.95mm

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

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