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IRF6655TR1

Infineon Technologies
RoHS
/
Package DirectFET? Isometric SH
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V DIRECTFET-SH
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric SH
Number of Pins 6
Supplier Device Package DIRECTFET? SH

Technical

Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Resistance 62mOhm
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.2W Ta 42W Tc
Power Dissipation 4.2W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 62mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4.8V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 530pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.2A Ta 19A Tc
Gate Charge (Qg) (Max) @ Vgs 11.7nC @ 10V
Rise Time 2.8ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 14 ns
Reverse Recovery Time 31 ns
Continuous Drain Current (ID) 19A
Threshold Voltage 4.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
Input Capacitance 530pF
Drain to Source Resistance 53mOhm
Rds On Max 62 mΩ
Nominal Vgs 4.8 V

Dimensions

Width 3.95mm

Compliance

REACH SVHC No SVHC
RoHS Status Non-RoHS Compliant

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