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SIE836DF-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 10-PolarPAK? (SH)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 200V 18.3A POLARPAK
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 10-PolarPAK? (SH)
Number of Pins 10
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish PURE MATTE TIN
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 10
JESD-30 Code R-PDSO-N4
Number of Elements 1
Power Dissipation-Max 5.2W Ta 104W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 5.2W
Case Connection DRAIN SOURCE
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 130m Ω @ 4.1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 100V
Current - Continuous Drain (Id) @ 25°C 18.3A Tc
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 4.1A
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 18.3A
Drain-source On Resistance-Max 0.13Ohm
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 15A
Avalanche Energy Rating (Eas) 1.25 mJ

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Alternative Model

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