Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.21.00.95
Subcategory Other Transistors
Max Power Dissipation 270mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Current Rating 630mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NTJD4105C
Pin Count 6
Qualification Status Not Qualified
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 270mW
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 375m Ω @ 630mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 46pF @ 20V
Current - Continuous Drain (Id) @ 25°C 630mA 775mA
Gate Charge (Qg) (Max) @ Vgs 3nC @ 4.5V
Rise Time 23ns
Drain to Source Voltage (Vdss) 20V 8V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 36 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 775mA
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 1.1A
Drain-source On Resistance-Max 0.375Ohm
Drain to Source Breakdown Voltage -8V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Feedback Cap-Max (Crss) 5 pF