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BS108/01,126

NXP USA Inc.
RoHS
RoHS RoHS compliant
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 200V 300MA SOT54
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Published 2001
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5Ohm @ 100mA, 2.8V
Vgs(th) (Max) @ Id 1.8V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 120pF @ 25V
Current - Continuous Drain (Id) @ 25°C 300mA Ta
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 2.8V
Vgs (Max) ±20V

Compliance

RoHS Status ROHS3 Compliant

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