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SI4567DY-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET N-AND P-CH 40V(D-S)
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Inventory: 13228
Minimum: 1
Total Price: USD $0.08
Unit Price: USD $0.076241
≥1 USD $0.076241
≥10 USD $0.073999
≥100 USD $0.071756
≥500 USD $0.068953

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 1.5mm
Length 5mm
Width 4mm

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 60mOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 1.95W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SI4567
Pin Count 8
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.75W
Power - Max 2.75W 2.95W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 60m Ω @ 4.1A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 355pF @ 20V
Current - Continuous Drain (Id) @ 25°C 5A 4.4A
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time 93ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 93 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 3.6A
Threshold Voltage 2.2V
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 4.1A
Drain to Source Breakdown Voltage 40V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Nominal Vgs 2.2 V

Alternative Model

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