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SI5509DC-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SMD, Flat Lead
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET N/P-CH 20V 6.1A 1206-8
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Inventory: 5052
Minimum: 1
Total Price: USD $4.71
Unit Price: USD $4.705208
≥1 USD $4.705208
≥10 USD $3.860325
≥100 USD $3.739628
≥500 USD $3.61893
≥1000 USD $3.49923

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 90mOhm
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 2.1W
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SI5509
Pin Count 8
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.1W
Power - Max 4.5W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 52m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 455pF @ 10V
Current - Continuous Drain (Id) @ 25°C 6.1A 4.8A
Gate Charge (Qg) (Max) @ Vgs 6.6nC @ 5V
Rise Time 75 ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 60 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 5A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 5A
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 10A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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