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Transistors - FETs, MOSFETs - Arrays
FDMA2002NZ_F130

FDMA2002NZ_F130

ON Semiconductor

RoHS

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Package 6-VDFN Exposed Pad

Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays

Description INTEGRATED CIRCUIT

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Technical Details

Physical

Mounting Type Surface Mount

Package / Case 6-VDFN Exposed Pad

Technical

Operating Temperature -55°C~150°C TJ

Packaging Bulk

Series PowerTrench?

Part Status Obsolete

Moisture Sensitivity Level (MSL) Not Applicable

Power - Max 650mW

FET Type 2 N-Channel (Dual)

Rds On (Max) @ Id, Vgs 123m Ω @ 2.9A, 4.5V

Vgs(th) (Max) @ Id 1.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds 220pF @ 15V

Current - Continuous Drain (Id) @ 25°C 2.9A

Gate Charge (Qg) (Max) @ Vgs 3nC @ 4.5V

Drain to Source Voltage (Vdss) 30V

FET Feature Logic Level Gate

Alternative Model

ROHM Semiconductor

FERD30S50DJF-TR

STMicroelectronics

ON Semiconductor

Taiwan Semiconductor Corporation

Infineon Technologies

Microsemi Corporation

Diodes Incorporated

Vishay Semiconductor Diodes Division

STMicroelectronics

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