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SI9926BDY-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description Trans MOSFET N-CH 20V 6.2A 8-Pin SOIC N T/R
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Inventory: 1966
Minimum: 1
Total Price: USD $0.02
Unit Price: USD $0.022872
≥1 USD $0.022872
≥10 USD $0.0222
≥100 USD $0.021527
≥500 USD $0.020686

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Weight 506.605978mg

Dimensions

Height 1.5494mm
Length 4.9784mm
Width 3.9878mm

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series TrenchFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 20mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 1.14W
Base Part Number SI9926
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Power Dissipation 1.14W
Turn On Delay Time 35 ns
Power - Max 1.14W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 20mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 6.2A
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Rise Time 50ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 50 ns
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) 8.2A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
FET Feature Logic Level Gate
Drain to Source Resistance 20mOhm
Rds On Max 20 mΩ
Nominal Vgs 600 mV

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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