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IPG20N06S2L50ATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 55V 20A TDSON-8-4
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Inventory: 4797
Minimum: 1
Total Price: USD $13.61
Unit Price: USD $13.614878
≥1 USD $13.614878
≥10 USD $11.171003
≥100 USD $10.821878
≥500 USD $10.472753
≥1000 USD $10.123628

Technical Details

Supply Chain

Factory Lead Time 10 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2003
Series OptiMOS?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 51W
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number *PG20N06
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-F
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 2 ns
Power - Max 51W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 50m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2V @ 19μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 560pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Rise Time 3ns
Fall Time (Typ) 10 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 55V
Drain-source On Resistance-Max 0.05Ohm
Avalanche Energy Rating (Eas) 60 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Alternative Model

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