Operating Temperature -40°C~150°C TJ
Packaging Bulk
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 25
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Max Power Dissipation 277W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 25
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 277W
Case Connection ISOLATED
Turn On Delay Time 10 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 150m Ω @ 14A, 10V
Vgs(th) (Max) @ Id 3.9V @ 2mA
Input Capacitance (Ciss) (Max) @ Vds 4507pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Rise Time 13ns
Drain to Source Voltage (Vdss) 800V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 83 ns
Continuous Drain Current (ID) 28A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.15Ohm
Pulsed Drain Current-Max (IDM) 110A
DS Breakdown Voltage-Min 800V
Avalanche Energy Rating (Eas) 670 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard