Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2012
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 25
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Max Power Dissipation 416W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 25
JESD-30 Code R-XUFM-X25
Number of Elements 4
Number of Channels 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 416W
Case Connection ISOLATED
Turn On Delay Time 21 ns
FET Type 4 N-Channel (H-Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 35m Ω @ 72A, 10V
Vgs(th) (Max) @ Id 3.9V @ 5.4mA
Input Capacitance (Ciss) (Max) @ Vds 14000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 518nC @ 10V
Rise Time 30 ns
Drain to Source Voltage (Vdss) 600V
Fall Time (Typ) 84 ns
Turn-Off Delay Time 283 ns
Continuous Drain Current (ID) 72A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 200A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard