Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2007
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Max Power Dissipation 208W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 12
Number of Elements 4
Configuration COMPLEX
Operating Mode ENHANCEMENT MODE
Power Dissipation 208W
Case Connection ISOLATED
Turn On Delay Time 29 ns
FET Type 4 N-Channel (H-Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 180m Ω @ 21A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 5448pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Rise Time 35ns
Drain to Source Voltage (Vdss) 500V
Fall Time (Typ) 26 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 25A
Gate to Source Voltage (Vgs) 30V
DS Breakdown Voltage-Min 500V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard