Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2006
Series HiPerFET?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 23
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Configuration BRIDGE, 4 ELEMENTS WITH BUILT-IN SINGLE PHASE DIODE BRIDGE AND THERMISTOR
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type 4 N-Channel (H-Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 116m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V
Drain to Source Voltage (Vdss) 500V
Forward Voltage 1.2V
Continuous Drain Current (ID) 40A
Peak Non-Repetitive Surge Current 400A
DS Breakdown Voltage-Min 500V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard