Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1999
Series HEXFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 22.6MOhm
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 2W
Terminal Form GULL WING
Base Part Number IRF7902PBF
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Power - Max 1.4W 2W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 22.6m Ω @ 6.4A, 10V
Vgs(th) (Max) @ Id 2.25V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 580pF @ 15V
Current - Continuous Drain (Id) @ 25°C 6.4A 9.7A
Gate Charge (Qg) (Max) @ Vgs 6.9nC @ 4.5V
Continuous Drain Current (ID) 9.7A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 7.3 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate