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SI4906DY-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 40V 6.6A 3.1W 39mohm @ 10V
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Inventory: 2536
Minimum: 1
Total Price: USD $14.52
Unit Price: USD $14.516618
≥1 USD $14.516618
≥10 USD $11.911148
≥100 USD $11.53908
≥500 USD $11.166015
≥1000 USD $10.793948

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish PURE MATTE TIN
Max Power Dissipation 3.1W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number SI4906
Pin Count 8
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 39m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 625pF @ 20V
Current - Continuous Drain (Id) @ 25°C 6.6A
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Rise Time 85ns
Fall Time (Typ) 7 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 5.3A
Gate to Source Voltage (Vgs) 16V
Drain-source On Resistance-Max 0.039Ohm
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 30A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard

Alternative Model

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