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SI5980DU-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? ChipFET? Dual
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 100V 2.5A 7.8W .567Ohms @ 10V
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? ChipFET? Dual
Number of Pins 8

Technical

Packaging Cut Tape (CT)
Published 2010
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish PURE MATTE TIN
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Subcategory FET General Purpose Powers
Max Power Dissipation 7.8W
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number SI5980
Pin Count 8
JESD-30 Code R-XDSO-N6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Case Connection DRAIN
Turn On Delay Time 8 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 567m Ω @ 400mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 78pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 3.3nC @ 10V
Rise Time 11ns
Drain to Source Voltage (Vdss) 100V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 8 ns
Continuous Drain Current (ID) 2.5A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 1.3A
Drain-source On Resistance-Max 0.567Ohm
Drain to Source Breakdown Voltage 100V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
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