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SI4539ADY-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 30V 5.9/4.9A 2.0W 36/53mohm @ 10V
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Inventory: 1040
Minimum: 1
Total Price: USD $0.14
Unit Price: USD $0.138653
≥1 USD $0.138653
≥10 USD $0.113715
≥100 USD $0.109725
≥500 USD $0.106733
≥1000 USD $0.102743
≥10000 USD $0.092768

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish PURE MATTE TIN
Subcategory Other Transistors
Max Power Dissipation 1.1W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number SI4539
Pin Count 8
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.1W
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 36m Ω @ 5.9A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C 4.4A 3.7A
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 10ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 10 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 3.7A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 4.4A
Drain-source On Resistance-Max 0.036Ohm
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Alternative Model

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