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SI4569DY-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET N/P-CH 40V 7.6A 8-SOIC
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish PURE MATTE TIN
Max Power Dissipation 3.2W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number SI4569
Pin Count 8
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Power - Max 3.1W 3.2W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 27m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 855pF @ 20V
Current - Continuous Drain (Id) @ 25°C 7.6A 7.9A
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Rise Time 105ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 60 ns
Turn-Off Delay Time 51 ns
Continuous Drain Current (ID) 7.9A
Threshold Voltage 600mV
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 6A
Drain to Source Breakdown Voltage 40V
Avalanche Energy Rating (Eas) 5 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

Alternative Model

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