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SI4967DY-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2P-CH 12V 8SOIC
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Inventory: 8708
Minimum: 1
Total Price: USD $0.38
Unit Price: USD $0.378053
≥1 USD $0.378053
≥10 USD $0.310223
≥100 USD $0.300248
≥500 USD $0.290273
≥1000 USD $0.281295

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 186.993455mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 23mOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 2W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 25 ns
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 23m Ω @ 7.5A, 4.5V
Vgs(th) (Max) @ Id 450mV @ 250μA (Min)
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Rise Time 40ns
Drain to Source Voltage (Vdss) 12V
Fall Time (Typ) 95 ns
Turn-Off Delay Time 210 ns
Continuous Drain Current (ID) 7.5A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -12V
Pulsed Drain Current-Max (IDM) 30A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Dimensions

Height 1.55mm
Length 5mm
Width 4mm

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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