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SI4966DY-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 20V 8SOIC
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Weight 186.993455mg

Dimensions

Height 1.55mm
Length 5mm
Width 4mm

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 2W
Base Part Number SI4966
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Power Dissipation 2W
Turn On Delay Time 40 ns
Power - Max 2W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 25mOhm @ 7.1A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 50nC @ 4.5V
Rise Time 40ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 90 ns
Continuous Drain Current (ID) 7.1A
Gate to Source Voltage (Vgs) 12V
FET Feature Logic Level Gate
Drain to Source Resistance 25mOhm
Rds On Max 25 mΩ

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Alternative Model

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