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SIZ790DT-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 6-PowerPair?
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 30V 16A / 35A Dual N-Ch MOSFET
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Inventory: 2564
Minimum: 1
Total Price: USD $4.23
Unit Price: USD $4.2294
≥1 USD $4.2294
≥10 USD $3.470303
≥100 USD $3.361575
≥500 USD $3.252848
≥1000 USD $3.145118

Technical Details

Supply Chain

Factory Lead Time 15 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-PowerPair?
Number of Pins 6
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series SkyFET?, TrenchFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory FET General Purpose Power
Max Power Dissipation 48W
Terminal Position DUAL
Terminal Form C BEND
Base Part Number SIZ790
Pin Count 6
Number of Elements 2
Number of Channels 2
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN SOURCE
Power - Max 27W 48W
FET Type 2 N-Channel (Half Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.3m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 830pF @ 15V
Current - Continuous Drain (Id) @ 25°C 16A 35A
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Rise Time 15 ns
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 35A
Threshold Voltage 1.1V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0093Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 70A
Avalanche Energy Rating (Eas) 13 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Dimensions

Height 750μm
Length 6mm
Width 3.73mm

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant

Alternative Model

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