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SIZ900DT-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 6-PowerPair?
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 30V 24/28A 48/100W 7.2/3.9mOhms @ 10V
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Inventory: 4086
Minimum: 1
Total Price: USD $0.44
Unit Price: USD $0.435908
≥1 USD $0.435908
≥10 USD $0.358103
≥100 USD $0.346133
≥500 USD $0.33516
≥1000 USD $0.324188

Technical Details

Supply Chain

Factory Lead Time 15 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-PowerPair?
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Subcategory FET General Purpose Power
Max Power Dissipation 100W
Terminal Position DUAL
Terminal Form C BEND
Base Part Number SIZ900
Pin Count 8
Number of Elements 2
Number of Channels 2
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN SOURCE
Power - Max 48W 100W
FET Type 2 N-Channel (Half Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.2m Ω @ 19.4A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1830pF @ 15V
Current - Continuous Drain (Id) @ 25°C 24A 28A
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 24A
Threshold Voltage 1.2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 90A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Dimensions

Height 750μm
Length 6mm
Width 5mm

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant

Alternative Model

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