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APTC90DDA12T1G

Microsemi Corporation
RoHS
/
Package SP1
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description Trans MOSFET N-CH 900V 30A 10-Pin Case SP-1
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Technical Details

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP1
Number of Pins 1
Transistor Element Material SILICON

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Technical

Operating Temperature -40°C~150°C TJ
Packaging Tray
Published 2012
Series CoolMOS?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 10
ECCN Code EAR99
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Max Power Dissipation 250W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 12
Number of Elements 2
Configuration COMPLEX
Operating Mode ENHANCEMENT MODE
Power Dissipation 250W
Case Connection ISOLATED
Turn On Delay Time 70 ns
FET Type 2 N Channel (Dual Buck Chopper)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 120m Ω @ 26A, 10V
Vgs(th) (Max) @ Id 3.5V @ 3mA
Input Capacitance (Ciss) (Max) @ Vds 6800pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V
Rise Time 20ns
Drain to Source Voltage (Vdss) 900V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 400 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 75A
DS Breakdown Voltage-Min 900V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Super Junction
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