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SIR882ADP-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? SO-8
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 60A PPAK SO-8
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Inventory: 1932
Minimum: 1
Total Price: USD $0.52
Unit Price: USD $0.51583
≥1 USD $0.51583
≥10 USD $0.500659
≥100 USD $0.485487
≥500 USD $0.466523

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2013
Series TrenchFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 8.7mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 5.4W Ta 83W Tc
Element Configuration Single
Power Dissipation 5.4W
Turn On Delay Time 11 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1975pF @ 50V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Rise Time 12ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 34 ns
Continuous Drain Current (ID) 60A
Threshold Voltage 1.2V
Gate to Source Voltage (Vgs) 20V
Input Capacitance 1.975nF
Drain to Source Resistance 7.2mOhm
Rds On Max 8.7 mΩ

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