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TPCC8002-H(TE12L,Q

Toshiba Semiconductor and Storage
RoHS
/
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 22A 8TSON
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Supplier Device Package 8-TSON Advance (3.3x3.3)

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series U-MOSV-H
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 700mW Ta 30W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.3mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 10V
Current - Continuous Drain (Id) @ 25°C 22A Ta
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Rise Time 2.8ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.9 ns
Continuous Drain Current (ID) 22A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 2.5nF
Rds On Max 8.3 mΩ

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

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