Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
Series TrenchMOS?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
HTS Code 8541.29.00.75
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 157W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 157W
Case Connection DRAIN
Turn On Delay Time 30 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3373pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 5V
Rise Time 135 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±15V
Fall Time (Typ) 98 ns
Turn-Off Delay Time 99 ns
Continuous Drain Current (ID) 90mA
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 15V
Max Dual Supply Voltage 30V
Drain Current-Max (Abs) (ID) 75A
Drain-source On Resistance-Max 0.009Ohm
Drain to Source Breakdown Voltage 30V