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IRLD110

Vishay Siliconix
RoHS
/
Package 4-DIP (0.300, 7.62mm)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 1A 4-DIP
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Inventory: 1360
Minimum: 1
Total Price: USD $10.2
Unit Price: USD $10.203428
≥1 USD $10.203428
≥10 USD $8.372018
≥100 USD $8.110673
≥500 USD $7.849328
≥1000 USD $7.586985

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case 4-DIP (0.300, 7.62mm)
Number of Pins 4
Supplier Device Package 4-DIP, Hexdip, HVMDIP

Dimensions

Height 3.37mm
Length 5mm
Width 6.29mm

Compliance

RoHS Status Non-RoHS Compliant

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 1.3W Ta
Turn On Delay Time 9.3 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 540mOhm @ 600mA, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1A Ta
Gate Charge (Qg) (Max) @ Vgs 6.1nC @ 5V
Rise Time 47ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4V 5V
Vgs (Max) ±10V
Fall Time (Typ) 47 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 1A
Gate to Source Voltage (Vgs) 10V
Drain to Source Breakdown Voltage 100V
Input Capacitance 250pF
Drain to Source Resistance 540mOhm
Rds On Max 540 mΩ

Alternative Model

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